Home
Tel: 86-755-83295289
Email:
mail@cxda.com
English
简体中文
한국어
About Us
All Product
Manufacturers
RFQ
Quality Control
News
Contact Us
PartNo
Keyword
Product Detail
All Product >
Discrete Semiconductors
>
IGBT
>
Infineon Technologies (BSC520N15NS3 G)
PartNo:
BSC520N15NS3 G
Manufacturers:
Infineon Technologies
Qty:
3118
Request Qty:
Description:
MOSFET N-channel POWER MOS
PDF:
Quick Quotation
Company Name:
*
Contact Name:
*
Email:
*
Tel:
*
Request Qty:
*
*
Verification Code:
*
Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
21 A
Rds On - Drain-Source Resistance:
52 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
8.7 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
57 W
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Packaging:
Reel
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
BSC520N15NS3 G Related Product
BSC500N20NS3
BSC520N15NS
BSC500N20NS3 G
BSC500N20NS3G
BSC520N15NS3G
BSC52N03S
BSC59N03NS3G
BSC59N03S
BSC59N03S
BSC520N15NS3G
BSC520N15NS3G
BSC59N03S G
BSC500N20NS3GATMA1
BSC520N15NS3 G
BSC520N15NS3 G
BSC520N15NS3 G
Electronic Components Distributor
Since 2000
©2001 - 2015 www.cxda.com all rights reservied.
FAQ
Product Index
Contact Us
Quality Control
RFQ
Manufacturers
About Us
Electronic Components Supplier |
China Electronic Components Manufacturer |
Electronic Components Distributor
粤ICP备15038990号